Non/Semi Polar Free-Standing GaN Substrates

Non/Semi Polar Free-Standing GaN Substrates

Non Polar and Semi Polar Free-Standing GaN Substrates

Specifications:

Item GaN-FS-A-U/N/SI-S GaN-FS-M-U/N/SI-S GaN-FS-SP-U/N/SI-S
Dimensions 5.0~10.0 mm × 10.0 mm; ± 0.2 mm
5.0~10.0 mm × 10.0 mm; ± 0.2 mm
Thickness 350 ± 25 µm
Orientation A-plane(11-20) off angle toward C-Axis -1°± 0.2° M-plane(1-100) off angle toward C-Axis -1°± 0.2° (20-21)
(20-2-1)
(11-22)
(30-31)
(10-11)
Total Thickness Variation ≤ 10 µm
BOW ≤ 10 µm
Conduction Type N-type(Undoped) < 0.5 Ω·cm
N-type(Ge-doped) < 0.05 Ω·
Resistivity(300K) Semi-Insulating(Fe-doped) > 106 Ω·cm
Dislocation Density 5×105 cm-2~3×106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

* Other thickness, size and offcut can be customized

Non Polar and Semi Polar Free-Standing GaN Substrates