Non Polar and Semi Polar Free-Standing GaN Substrates
Specifications:
| Item | GaN-FS-A-U/N/SI-S | GaN-FS-M-U/N/SI-S | GaN-FS-SP-U/N/SI-S |
|---|---|---|---|
| Dimensions | 5.0~10.0 mm × 10.0 mm; ± 0.2 mm 5.0~10.0 mm × 10.0 mm; ± 0.2 mm |
||
| Thickness | 350 ± 25 µm | ||
| Orientation | A-plane(11-20) off angle toward C-Axis -1°± 0.2° | M-plane(1-100) off angle toward C-Axis -1°± 0.2° | (20-21) (20-2-1) (11-22) (30-31) (10-11) |
| Total Thickness Variation | ≤ 10 µm | ||
| BOW | ≤ 10 µm | ||
| Conduction Type | N-type(Undoped) < 0.5 Ω·cm N-type(Ge-doped) < 0.05 Ω· |
||
| Resistivity(300K) | Semi-Insulating(Fe-doped) > 106 Ω·cm | ||
| Dislocation Density | 5×105 cm-2~3×106 cm-2 | ||
| Useable Surface Area | > 90% | ||
| Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
||
| Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | ||
* Other thickness, size and offcut can be customized
