2 inch GaN Templates
Specifications:
| Item | GaN-T-C-U-C50 | GaN-T-C-N-C50 | GaN-T-C-P-C50 |
|---|---|---|---|
| Dimensions | Ф 50.8mm ± 0.1mm | ||
| Thickness | 4 µm, 20 µm | 4 µm | |
| Orientation | C-plane(0001) ± 0.5° | ||
| Conduction Type | N-type (Undoped) |
N-type (Si-doped) |
P-type (Mg-doped) |
| Resistivity(300K) | < 0.5 Ω·cm | < 0.05 Ω·cm | ~ 10 Ω·cm |
| Carrier Concentration | < 5×1017 cm-3 | > 1×1018 cm-3 | > 6×1016 cm-3 |
| Mobility | ~ 300cm2/V·s | ~ 200 cm2/V·s | ~ 10 cm2/V·s |
| Dislocation Density | Less than 5×108 cm-2 | ||
| Substrate structure | GaN on Sapphire (Standard: SSP Option: DSP) | ||
| Useable Surface Area | > 90% | ||
| Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. | ||
* Other thickness can be customized
4 inch GaN Templates
Specifications:
| Item | GaN-T-C-U-C100 | GaN-T-C-N-C100 |
|---|---|---|
| Dimensions | Ф 100 mm ± 0.1 mm | |
| Thickness | 4 µm, 20 µm | |
| Orientation | C-plane(0001) ± 0.5° | |
| Conduction Type | N-type (Undoped) |
N-type (Si-doped) |
| Resistivity(300K) | < 0.5 Ω·cm | < 0.05 Ω·cm |
| Carrier Concentration | < 5×1017 cm-3 | > 1×1018 cm-3 |
| Mobility | ~ 300cm2/V·s | ~ 200 cm2/V·s |
| Dislocation Density | Less than 5×108 cm-2 | |
| Substrate structure | GaN on Sapphire(Standard: SSP Option: DSP) | |
| Useable Surface Area | > 90% | |
| Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. | |
