GaN Templates 2 & 4 inch

GaN Templates 2 & 4 inch

2 inch GaN Templates

Specifications:

Item GaN-T-C-U-C50 GaN-T-C-N-C50 GaN-T-C-P-C50
Dimensions Ф 50.8mm ± 0.1mm
Thickness 4 µm, 20 µm 4 µm
Orientation C-plane(0001) ± 0.5°
Conduction Type N-type
(Undoped)
N-type
(Si-doped)
P-type
(Mg-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm ~ 10 Ω·cm
Carrier Concentration < 5×1017 cm-3 > 1×1018 cm-3 > 6×1016 cm-3
Mobility ~ 300cm2/V·s ~ 200 cm2/V·s ~ 10 cm2/V·s
Dislocation Density Less than 5×108 cm-2
Substrate structure GaN on Sapphire (Standard: SSP Option: DSP)
Useable Surface Area > 90%
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

* Other thickness can be customized

2 inch GaN Templates

4 inch GaN Templates

Specifications:

Item GaN-T-C-U-C100 GaN-T-C-N-C100
Dimensions Ф 100 mm ± 0.1 mm
Thickness 4 µm, 20 µm
Orientation C-plane(0001) ± 0.5°
Conduction Type N-type
(Undoped)
N-type
(Si-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm
Carrier Concentration < 5×1017 cm-3 > 1×1018 cm-3
Mobility ~ 300cm2/V·s ~ 200 cm2/V·s
Dislocation Density Less than 5×108 cm-2
Substrate structure GaN on Sapphire(Standard: SSP Option: DSP)
Useable Surface Area > 90%
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.
4 inch GaN Templates