Free-Standing GaN Substrates (Customized size)

Free-Standing GaN Substrates (Customized size)

Free-standing GaN Substrates (Customized size)

Specifications:

Item GaN-FS-C-U-S10*10 GaN-FS-C-N-S10*10 GaN-FS-C-SI-S10*10
Dimensions 10.0 mm x 10.5 mm;± 0.2 mm
Thickness 350 ± 25 µm
Orientation C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Total Thickness Variation ≤ 10 µm
BOW ≤ 10 µm
Conduction Type N-type
(Undoped)
N-type
(Ge-doped)
Semi-Insulating
(Fe-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
Dislocation Density 1~9×104cm-2
1~9×105 cm-2
1~3×106 cm-2
5×105 cm-2~3×106 cm-2 1~9×104cm-2
1~9×105 cm-2
1~3×106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

* Other size can be customized (e.g. 14.0mm×15.0mm, Ф 25.4mm, Ф 38.1mm)

Free-standing GaN Substrates (Customized size)