2 inch Free-Standing GaN Substrates

2 inch Free-Standing GaN Substrates

2 inch Free-Standing GaN Substrates

Specifications:

Item GaN-FS-C-U-C50 GaN-FS-C-N-C50 GaN-FS-C-SI-C50
Dimensions Ф 50.8 mm ± 1 mm
Thickness 350 ± 25 µm
Useable Surface Area > 90%
Orientation C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0 mm
Total Thickness Variation ≤ 15 µm
BOW ≤ 20 µm
*Conduction Type N-type
(Undoped)
N-type
(Ge-doped)
Semi-Insulating
(Fe-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm >106 Ω·cm
Dislocation Density 1~9×105 cm-2
1~3×106 cm-2
5×105 cm-2
~3×106 cm-2
1~9×105 cm-2
1~3×106 cm-2
Polishing Front Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

* 3 inch and 4 inch Free-Standing GaN Substrates are coming soon.

2 inch Free-Standing GaN Substrates